SIHP10N40D-E3 vs SIHP10N40D-GE3 vs SIHP10N40D

 
PartNumberSIHP10N40D-E3SIHP10N40D-GE3SIHP10N40D
DescriptionMOSFET 400V Vds 30V Vgs TO-220ABMOSFET 400V Vds 30V Vgs TO-220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3TO-220AB-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage400 V400 V-
Id Continuous Drain Current10 A10 A-
Rds On Drain Source Resistance600 mOhms600 mOhms-
Vgs th Gate Source Threshold Voltage5 V5 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge15 nC15 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation147 W147 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.49 mm15.49 mm-
Length10.41 mm10.41 mm-
SeriesDE-
Width4.7 mm4.7 mm-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time14 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time18 ns18 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns18 ns-
Typical Turn On Delay Time12 ns12 ns-
Unit Weight0.211644 oz0.211644 oz-
Tradename-TrenchFET-
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