SIHP15N50E-GE3 vs SIHP15N50E vs SIHP15N60E

 
PartNumberSIHP15N50E-GE3SIHP15N50ESIHP15N60E
DescriptionMOSFET 500V Vds 30V Vgs TO-220AB
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current14.5 A--
Rds On Drain Source Resistance243 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge33 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation156 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesE--
BrandVishay / Siliconix--
Fall Time18 ns--
Product TypeMOSFET--
Rise Time24 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.211644 oz--
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