SIHP15N60E-E3 vs SIHP15N60E-GE3 vs SIHP15N60E

 
PartNumberSIHP15N60E-E3SIHP15N60E-GE3SIHP15N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-220ABMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3TO-220AB-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current15 A15 A-
Rds On Drain Source Resistance280 mOhms280 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge39 nC39 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation180 W180 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesEE-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time22 ns22 ns-
Product TypeMOSFETMOSFET-
Rise Time26 ns26 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time41 ns41 ns-
Typical Turn On Delay Time16 ns16 ns-
Unit Weight0.211644 oz0.211644 oz-
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