SIHP17N60D-E3 vs SIHP17N60D-GE3 vs SIHP17N60D

 
PartNumberSIHP17N60D-E3SIHP17N60D-GE3SIHP17N60D
DescriptionMOSFET 600V Vds 30V Vgs TO-220ABMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3TO-220AB-3-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current17 A17 A-
Rds On Drain Source Resistance340 mOhms340 mOhms-
Vgs th Gate Source Threshold Voltage5 V5 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge45 nC45 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation277.8 W277.8 W-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesDD-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time30 ns30 ns-
Product TypeMOSFETMOSFET-
Rise Time56 ns56 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time37 ns37 ns-
Typical Turn On Delay Time22 ns22 ns-
Unit Weight0.211644 oz0.211644 oz-
Top