SIHP20N50E-GE3 vs SIHP21N60EF-GE3 vs SIHP21N65EF-GE3

PartNumber	SIHP20N50E-GE3	SIHP21N60EF-GE3	SIHP21N65EF-GE3
Description	MOSFET 500V Vds 30V Vgs TO-220AB	MOSFET 600V Vds 30V Vgs TO-220AB	MOSFET 650V Vds 30V Vgs TO-220AB
Manufacturer	Vishay	Vishay	Vishay
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220AB-3	TO-220AB-3	TO-220AB-3
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds Drain Source Breakdown Voltage	500 V	-	650 V
Id Continuous Drain Current	19 A	-	21 A
Rds On Drain Source Resistance	184 mOhms	-	180 mOhms
Vgs th Gate Source Threshold Voltage	4 V	-	4 V
Vgs Gate Source Voltage	30 V	-	30 V
Qg Gate Charge	46 nC	-	71 nC
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Pd Power Dissipation	179 W	-	208 W
Configuration	Single	-	Single
Channel Mode	Enhancement	-	Enhancement
Packaging	Tube	Tube	Tube
Height	15.49 mm	-	15.49 mm
Length	10.41 mm	-	10.41 mm
Series	E	EF	EF
Width	4.7 mm	-	4.7 mm
Brand	Vishay / Siliconix	Vishay / Siliconix	Vishay / Siliconix
Fall Time	25 ns	-	42 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	27 ns	-	34 ns
Factory Pack Quantity	50	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	48 ns	-	68 ns
Typical Turn On Delay Time	17 ns	-	22 ns
Unit Weight	0.211644 oz	0.081130 oz	0.211644 oz