SIHP22N60E-E3 vs SIHP22N60E-E3 P22N60E vs SIHP22N60E-E3,SIHP22N60S

 
PartNumberSIHP22N60E-E3SIHP22N60E-E3 P22N60ESIHP22N60E-E3,SIHP22N60S
DescriptionMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance180 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge57 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation227 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesE--
BrandVishay / Siliconix--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time27 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time66 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.211644 oz--
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