SIHP24N65E-GE3 vs SIHP24N65E-E3 vs SIHP24N65EF-GE3

PartNumber	SIHP24N65E-GE3	SIHP24N65E-E3	SIHP24N65EF-GE3
Description	MOSFET 650V Vds 30V Vgs TO-220AB	MOSFET 650V Vds 30V Vgs TO-220AB	MOSFET 650V Vds 30V Vgs TO-220AB
Manufacturer	Vishay	Vishay	Vishay
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220AB-3	TO-220AB-3	TO-220AB-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	650 V	650 V	650 V
Id Continuous Drain Current	24 A	24 A	24 A
Rds On Drain Source Resistance	145 mOhms	145 mOhms	156 mOhms
Vgs th Gate Source Threshold Voltage	4 V	4 V	4 V
Vgs Gate Source Voltage	30 V	30 V	20 V
Qg Gate Charge	81 nC	81 nC	81 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	250 W	250 W	250 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Height	15.49 mm	15.49 mm	-
Length	10.41 mm	10.41 mm	-
Series	E	E	E
Width	4.7 mm	4.7 mm	-
Brand	Vishay / Siliconix	Vishay / Siliconix	Vishay / Siliconix
Fall Time	69 ns	69 ns	46 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	84 ns	84 ns	34 ns
Factory Pack Quantity	50	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	70 ns	70 ns	80 ns
Typical Turn On Delay Time	24 ns	24 ns	24 ns
Unit Weight	0.211644 oz	0.211644 oz	0.211644 oz