SIHP30N60E-GE3 vs SIHP30N60E-GE3,SIHP30N60 vs SIHP30N60E-GE3,SIHP30N60E,

 
PartNumberSIHP30N60E-GE3SIHP30N60E-GE3,SIHP30N60SIHP30N60E-GE3,SIHP30N60E,
DescriptionMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current29 A--
Rds On Drain Source Resistance125 mOhms--
Vgs th Gate Source Threshold Voltage2.8 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge85 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.49 mm--
Length10.41 mm--
SeriesE--
Width4.7 mm--
BrandVishay / Siliconix--
Fall Time36 ns--
Product TypeMOSFET--
Rise Time32 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time63 ns--
Typical Turn On Delay Time19 ns--
Unit Weight0.211644 oz--
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