SIHS20N50C-E3 vs SIHS20N50C vs SIHS36N50D

 
PartNumberSIHS20N50C-E3SIHS20N50CSIHS36N50D
DescriptionMOSFET 500V Vds 30V Vgs Super-247
ManufacturerVishayVishay / Siliconix-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance270 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge65 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height20.8 mm--
Length16.1 mm--
Width5.3 mm--
BrandVishay / Siliconix--
Fall Time44 ns--
Product TypeMOSFET--
Rise Time27 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time80 ns--
Unit Weight0.211644 oz--
Series-E-
Transistor Type-1 N-Channel-
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