 |  |  | |
| PartNumber | SIHW21N80AE-GE3 | SIHW23N60E-GE3 | SIHW22N65E-GE3 |
| Description | MOSFET E Series Power MOSFET | MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS | RF Bipolar Transistors MOSFET 650V 180mOhms@10V 22A N-Ch E-SRS |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247AD-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | - |
| Id Continuous Drain Current | 17.4 A | 23 A | - |
| Rds On Drain Source Resistance | 235 mOhms | 158 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 48 nC | 63 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 32 W | 227 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Bulk | - |
| Series | E | E | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 76 ns | 34 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 38 ns | 38 ns | - |
| Factory Pack Quantity | 20 | 480 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 71 ns | 66 ns | - |
| Typical Turn On Delay Time | 21 ns | 22 ns | - |
| Height | - | 20.82 mm | - |
| Length | - | 15.87 mm | - |
| Width | - | 5.31 mm | - |
| Unit Weight | - | 1.340411 oz | - |