SIR106DP-T1-RE3 vs SIR104DP-T1-RE3 vs SIR106DP-T1-E3

 
PartNumberSIR106DP-T1-RE3SIR104DP-T1-RE3SIR106DP-T1-E3
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8MOSFET 100V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current65.8 A79 A-
Rds On Drain Source Resistance6.6 mOhms7.4 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V7.5 V-
Qg Gate Charge42.5 nC56 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation83.3 W100 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time6 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time7 ns7 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns29 ns-
Typical Turn On Delay Time15 ns7 ns-
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