SIR401DP-T1-GE3 vs SIR402 vs SIR402DP

 
PartNumberSIR401DP-T1-GE3SIR402SIR402DP
DescriptionMOSFET -20V Vds 12V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance2.5 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge310 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation39 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
SeriesSIR--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min77 S--
Fall Time41 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time175 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSIR401DP-GE3--
Unit Weight0.017870 oz--
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