SIR422DP-T1-GE3 vs SIR422DP-T1-GE3-CUT TAPE vs SIR422DP-T1-E3

 
PartNumberSIR422DP-T1-GE3SIR422DP-T1-GE3-CUT TAPESIR422DP-T1-E3
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current20.5 A--
Rds On Drain Source Resistance6.6 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge48 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation34.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
SeriesSIR--
BrandVishay / Siliconix--
Forward Transconductance Min70 S--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time84 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time19 ns--
Part # AliasesSIR422DP-GE3--
Unit Weight0.008466 oz--
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