SIR610DP-T1-RE3 vs SIR610DP-T1-E3 vs SIR610DP-T1-GE3

 
PartNumberSIR610DP-T1-RE3SIR610DP-T1-E3SIR610DP-T1-GE3
DescriptionMOSFET 200V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current35.4 A--
Rds On Drain Source Resistance23.9 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge38 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameThunderFET, PowerPAK--
PackagingReel--
SeriesSIR--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min27 S--
Fall Time24 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.017870 oz--
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