SIR622DP-T1-GE3 vs SIR622DP-T1-RE3 vs SIR622 21.5VDC

 
PartNumberSIR622DP-T1-GE3SIR622DP-T1-RE3SIR622 21.5VDC
DescriptionMOSFET 150V Vds 20V Vgs PowerPAK SO-8MOSFET 150V Vds; 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V150 V-
Id Continuous Drain Current51.6 A51.6 A-
Rds On Drain Source Resistance17.7 mOhms17.7 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge27 nC41 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W104 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameThunderFET, PowerPAKThunderFET, PowerPAK-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSIRSIR-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min33 S33 S-
Fall Time6 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time6 ns6 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns18 ns-
Typical Turn On Delay Time13 ns13 ns-
Unit Weight0.017870 oz--
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