SIR644DP-T1-GE3 vs SIR644DP vs SIR644DP-T1-E3

 
PartNumberSIR644DP-T1-GE3SIR644DPSIR644DP-T1-E3
DescriptionMOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance2.2 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge71 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation69 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSIR--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min87 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.017870 oz--
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