SIR692DP-T1-RE3 vs SIR690DP-T1-GE3 vs SIR690DP-T1-RE3

 
PartNumberSIR692DP-T1-RE3SIR690DP-T1-GE3SIR690DP-T1-RE3
DescriptionMOSFET 250V Vds 20V Vgs PowerPAK SO-8MOSFET 200V Vds 20V Vgs PowerPAK SO-8MOSFET 200V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage250 V200 V200 V
Id Continuous Drain Current24.2 A34.4 A34.4 A
Rds On Drain Source Resistance52 mOhms35 mOhms28.5 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V10 V20 V
Qg Gate Charge40 nC31.9 nC48 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation104 W104 W104 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFET, PowerPAKThunderFET, PowerPAKThunderFET, PowerPAK
PackagingReelReelReel
SeriesSIRSIRSIR
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min26 S46 S46 S
Fall Time32 ns6 ns6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time62 ns19 ns19 ns
Factory Pack Quantity300030006000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns19 ns19 ns
Typical Turn On Delay Time13 ns10 ns10 ns
Unit Weight0.017870 oz0.017870 oz0.017870 oz
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