SIR770DP-T1-GE3 vs SIR770DP vs SIR770DP-T1-E3

 
PartNumberSIR770DP-T1-GE3SIR770DPSIR770DP-T1-E3
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay-VISHAY
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance21 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation17.8 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSIR--
Transistor Type2 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min31 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSIR770DP-GE3--
Unit Weight0.017870 oz--
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