SIR826ADP-T1-GE3 vs SIR826BDP-T1-RE3 vs SIR82609

 
PartNumberSIR826ADP-T1-GE3SIR826BDP-T1-RE3SIR82609
DescriptionMOSFET 80V Vds 20V Vgs PowerPAK SO-8MOSFET 80V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current60 A80.8 A-
Rds On Drain Source Resistance4.6 mOhms5.1 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge86 nC69 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W83 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
Transistor Type1 N-Channel1 N-Channel TrenchFET Power MOSFET-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min68 S65 S-
Fall Time7 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time12 ns8 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time34 ns25 ns-
Typical Turn On Delay Time9 ns14 ns-
Unit Weight0.017870 oz--
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