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| PartNumber | SIR870DP-T1-GE3 | SIR870ADP-T1-GE3 | SIR870ADP-T1-RE3 |
| Description | MOSFET N-CHANNEL 100-V(D-S) | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 60 A | 60 A | 60 A |
| Rds On Drain Source Resistance | 5 mOhms | 5.5 mOhms | 5.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 84 nC | 80 nC | 80 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 104 W | 104 W | 104 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIR | SIR | SIR |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 80 S | 68 S | 68 S |
| Fall Time | 8 ns | 9 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 14 ns | 14 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | 35 ns | 35 ns |
| Typical Turn On Delay Time | 12 ns | 13 ns | 13 ns |
| Part # Aliases | SIR870DP-GE3 | SIR870ADP-GE3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Height | - | 1.04 mm | - |
| Length | - | 6.15 mm | - |
| Width | - | 5.15 mm | - |