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| PartNumber | SIRA18ADP-T1-GE3 | SIRA18BDP-T1-GE3 | SIRA18ADP-T1-E3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET N-Channel 30 V (D-S) MOSFET | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | PowerPAK SO-8 | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 40 A | - |
| Rds On Drain Source Resistance | - | 5.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | - 4.4 V | - |
| Vgs Gate Source Voltage | - | - 16 V, + 20 V | - |
| Qg Gate Charge | - | 12.2 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Depletion | - |
| Fall Time | - | 5 ns | - |
| Rise Time | - | 5 ns | - |
| Typical Turn Off Delay Time | - | 15 ns | - |
| Typical Turn On Delay Time | - | 8 ns | - |