SIRA32DP-T1-RE3 vs SIRA34DP-T1-GE3 vs SIRA334

 
PartNumberSIRA32DP-T1-RE3SIRA34DP-T1-GE3SIRA334
DescriptionMOSFET 25V Vds 16V Vgs PowerPAK SO-8MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V30 V-
Id Continuous Drain Current60 A40 A-
Rds On Drain Source Resistance1 mOhms5.3 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V1.1 V-
Vgs Gate Source Voltage16 V, - 12 V20 V, - 16 V-
Qg Gate Charge55 nC25 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation65.7 W31.25 W-
ConfigurationSingleSingle-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time10 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time23 ns11 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns19 ns-
Typical Turn On Delay Time14 ns11 ns-
Unit Weight0.017870 oz0.017870 oz-
Channel Mode-Enhancement-
Forward Transconductance Min-52 S-
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