SIRA80DP-T1-RE3 vs SIRA84BDP-T1-GE3 vs SIRA84DP-T1-GE3

 
PartNumberSIRA80DP-T1-RE3SIRA84BDP-T1-GE3SIRA84DP-T1-GE3
DescriptionMOSFET 30V Vds 20/-16V Vgs PowerPAK SO-8MOSFET N-Channel 30 V (D-S) MOSFETMOSFET N-CH 30V 60A POWERPAKSO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current100 A70 A-
Rds On Drain Source Resistance470 uOhms7.1 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V1.2 V-
Vgs Gate Source Voltage20 V, - 16 V- 16 V, 20 V-
Qg Gate Charge125 nC20.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W36 W-
ConfigurationSingleSingle-
TradenameTrenchFET, PowerPAKTrenchFET-
PackagingReelReel-
SeriesSIR--
BrandVishay / SiliconixVishay / Siliconix-
Fall Time12 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time23 ns5 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time41 ns20 ns-
Typical Turn On Delay Time17 ns10 ns-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
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