SIRC10DP-T1-GE3 vs SIRC100S vs SIRC16DP-T1-GE3

 
PartNumberSIRC10DP-T1-GE3SIRC100SSIRC16DP-T1-GE3
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8MOSFET N-CH 25V 60A POWERPAKSO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance3.5 mOhms--
Vgs th Gate Source Threshold Voltage2.4 V--
Vgs Gate Source Voltage20 V, - 16 V--
Qg Gate Charge24 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation43 W--
ConfigurationSingle--
TradenameTrenchFET, PowerPAK--
PackagingReel--
SeriesSIR--
BrandVishay / Siliconix--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.017870 oz--
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