SIS126DN-T1-GE3 vs SIS1206L-4R6FT vs SIS12557HN-1R2RT

 
PartNumberSIS126DN-T1-GE3SIS1206L-4R6FTSIS12557HN-1R2RT
DescriptionMOSFET N-Channel 80 V (D-S) MOSFET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current45.1 A--
Rds On Drain Source Resistance10.2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerPAK--
PackagingReel--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min39 S--
Fall Time6 ns--
Product TypeMOSFET--
Rise Time6 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time13 ns--
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