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| PartNumber | SISH410DN-T1-GE3 | SISH407DN-T1-GE3 | SISH402DN-T1-GE3 |
| Description | MOSFET 20V Vds; +/-20V Vgs PowerPAK 1212-8SH | MOSFET -20V Vds; +/-8V Vgs PowerPAK 1212-8SH | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK1212-8 | PowerPAK-1212-8SH-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 30 V |
| Id Continuous Drain Current | 35 A | - 25 A | 35 A |
| Rds On Drain Source Resistance | 4.8 mOhms | 9.5 mOhms | 6 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - 1 V | 1.15 V |
| Vgs Gate Source Voltage | 20 V | 8 V | 20 V |
| Qg Gate Charge | 41 nC | 93.8 nC | 42 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 52 W | 33 W | 52 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET; PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIS | - | SIS |
| Transistor Type | 1 N-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 70 A | 60 S | 82 S |
| Fall Time | 15 ns | 38 ns | 15 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 28 ns | 20 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 92 ns | 25 ns |
| Typical Turn On Delay Time | 12 ns | 23 ns | 25 ns |