SISS23DN-T1-GE3 vs SISS22DN-T1-GE3 vs SISS23DN

 
PartNumberSISS23DN-T1-GE3SISS22DN-T1-GE3SISS23DN
DescriptionMOSFET -20V Vds 8V Vgs PowerPAK 1212-8SMOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8PowerPAK-1212-8S-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V60 V-
Id Continuous Drain Current50 A90.6 A-
Rds On Drain Source Resistance3.5 mOhms4 mOhms-
Vgs th Gate Source Threshold Voltage900 mV2 V-
Vgs Gate Source Voltage8 V20 V-
Qg Gate Charge300 nC44 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation57 W65.7 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
Height1.04 mm--
Length3.3 mm--
SeriesSISSIS-
Transistor Type1 P-Channel1 N-Channel TrenchFET Power MOSFET-
Width3.3 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min44 S50 S-
Fall Time50 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time50 ns6 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time140 ns20 ns-
Typical Turn On Delay Time45 ns12 ns-
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