SiSS42DN-T1-GE3 vs SISS40DN-T1-GE3 vs SISS40DN

 
PartNumberSiSS42DN-T1-GE3SISS40DN-T1-GE3SISS40DN
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK 1212-8SMOSFET 100V Vds 20V Vgs PowerPAK 1212-8S
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8S-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current40.5 A--
Rds On Drain Source Resistance14.4 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge24.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation57 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min46 S--
Fall Time6 ns, 7 ns--
Product TypeMOSFETMOSFET-
Rise Time6 ns, 7 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns, 21 ns--
Typical Turn On Delay Time12 ns, 15 ns--
Tradename-TrenchFET, PowerPAK-
Series-SIS-
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