SIZ720DT-T1-GE3 vs SIZ728DT-T1-GE3 vs SIZ728DT

 
PartNumberSIZ720DT-T1-GE3SIZ728DT-T1-GE3SIZ728DT
DescriptionMOSFET N-CHANNEL 20-V (D-S) MOSFETMOSFET 25V Vds 20V Vgs PowerPAIR 6 x 3.7
ManufacturerVishayVishayVishay Siliconix
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerPAIR-6x3.7-6--
TradenameTrenchFETTrenchFET-
PackagingReelReelDigi-ReelR Alternate Packaging
Height0.75 mm--
Length6 mm--
SeriesSIZSIZTrenchFETR
Width3.7 mm--
BrandVishay / SiliconixVishay / Siliconix-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # Aliases-SIZ728DT-GE3-
Part Aliases--SIZ728DT-GE3
Package Case--6-PowerPair
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--6-PowerPair
Configuration--Dual
FET Type--2 N-Channel (Half Bridge)
Power Max--27W, 48W
Transistor Type--2 N-Channel
Drain to Source Voltage Vdss--25V
Input Capacitance Ciss Vds--890pF @ 12.5V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--16A, 35A
Rds On Max Id Vgs--7.7 mOhm @ 18A, 10V
Vgs th Max Id--2.2V @ 250μA
Gate Charge Qg Vgs--26nC @ 10V
Pd Power Dissipation--2.5 W 3 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--10 ns
Rise Time--15 ns 18 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--14.2 A
Vds Drain Source Breakdown Voltage--25 V
Rds On Drain Source Resistance--6.3 mOhms 2.9 mOhms
Transistor Polarity--N-Channel
Forward Transconductance Min--37 S 80 S
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