PartNumber | SIZ720DT-T1-GE3 | SIZ728DT-T1-GE3 | SIZ728DT |
Description | MOSFET N-CHANNEL 20-V (D-S) MOSFET | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 3.7 | |
Manufacturer | Vishay | Vishay | Vishay Siliconix |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | PowerPAIR-6x3.7-6 | - | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Height | 0.75 mm | - | - |
Length | 6 mm | - | - |
Series | SIZ | SIZ | TrenchFETR |
Width | 3.7 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | - | SIZ728DT-GE3 | - |
Part Aliases | - | - | SIZ728DT-GE3 |
Package Case | - | - | 6-PowerPair |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 2 Channel |
Supplier Device Package | - | - | 6-PowerPair |
Configuration | - | - | Dual |
FET Type | - | - | 2 N-Channel (Half Bridge) |
Power Max | - | - | 27W, 48W |
Transistor Type | - | - | 2 N-Channel |
Drain to Source Voltage Vdss | - | - | 25V |
Input Capacitance Ciss Vds | - | - | 890pF @ 12.5V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 16A, 35A |
Rds On Max Id Vgs | - | - | 7.7 mOhm @ 18A, 10V |
Vgs th Max Id | - | - | 2.2V @ 250μA |
Gate Charge Qg Vgs | - | - | 26nC @ 10V |
Pd Power Dissipation | - | - | 2.5 W 3 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 10 ns |
Rise Time | - | - | 15 ns 18 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 14.2 A |
Vds Drain Source Breakdown Voltage | - | - | 25 V |
Rds On Drain Source Resistance | - | - | 6.3 mOhms 2.9 mOhms |
Transistor Polarity | - | - | N-Channel |
Forward Transconductance Min | - | - | 37 S 80 S |