PartNumber | SPP02N80C3 | SPP02N80C3,02N80C3 | SPP02N80C3,SPA02N80C3,SP |
Description | IGBT Transistors MOSFET N-Ch 800V 2A TO220-3 CoolMOS C3 | ||
Manufacturer | INF | - | - |
Product Category | FETs - Single | - | - |
Series | CoolMOS C3 | - | - |
Packaging | Tube | - | - |
Part Aliases | SP000683150 SPP02N80C3XK SPP02N80C3XKSA1 | - | - |
Unit Weight | 0.211644 oz | - | - |
Mounting Style | Through Hole | - | - |
Tradename | CoolMOS | - | - |
Package Case | TO-220-3 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 42 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 18 ns | - | - |
Rise Time | 15 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 2 A | - | - |
Vds Drain Source Breakdown Voltage | 800 V | - | - |
Rds On Drain Source Resistance | 2.7 Ohms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 65 ns | - | - |
Typical Turn On Delay Time | 25 ns | - | - |
Channel Mode | Enhancement | - | - |