SPU07N60C3 vs SPU07N60C3BKMA1 vs SPU07N60

 
PartNumberSPU07N60C3SPU07N60C3BKMA1SPU07N60
DescriptionMOSFET N-Ch 600V 7.3A IPAK-3 CoolMOS C3MOSFET LOW POWER_LEGACY
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current7.3 A--
Rds On Drain Source Resistance600 mOhms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation83 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameCoolMOSCoolMOSCoolMOS
PackagingTubeTubeTube
Height6.22 mm6.22 mm-
Length6.73 mm6.73 mm-
SeriesCoolMOS C3-CoolMOS C3
Transistor Type1 N-Channel-1 N-Channel
Width2.38 mm2.38 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time7 ns-7 ns
Product TypeMOSFETMOSFET-
Rise Time3.5 ns-3.5 ns
Factory Pack Quantity1500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time60 ns-60 ns
Typical Turn On Delay Time6 ns-6 ns
Part # AliasesSP000101635 SPU07N60C3BKMA1 SPU7N6C3XKSP000101635 SPU07N60C3 SPU7N6C3XK-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Part Aliases--SP000101635 SPU07N60C3BKMA1 SPU07N60C3XK
Package Case--IPAK-3
Pd Power Dissipation--83 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--7.3 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--600 mOhms
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