PartNumber | SQ1912EH-T1_GE3 | SQ1912EEH | SQ1912EEH-T1-GE3 |
Description | MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-363-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 800 mA | - | - |
Rds On Drain Source Resistance | 200 mOhms, 200 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Qg Gate Charge | 1.15 nC, 1.15 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 1.5 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Series | SQ | - | - |
Transistor Type | 2 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 2.6 S, 2.6 S | - | - |
Fall Time | 17 ns, 17 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 21 ns, 21 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 19 ns, 19 ns | - | - |
Typical Turn On Delay Time | 3 ns, 3 ns | - | - |
Unit Weight | 0.000265 oz | - | - |