SQ2348ES-T1_GE3 vs SQ2348ES vs SQ2348ES-T1

 
PartNumberSQ2348ES-T1_GE3SQ2348ESSQ2348ES-T1
DescriptionMOSFET 30V 8A 3W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance24 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge7.95 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min10 S--
Fall Time6 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time4.5 ns--
Unit Weight0.000282 oz--
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