SQD50N04-5m6_T4GE3 vs SQD50N04-5m6_GE3 vs SQD50N04-5M6

 
PartNumberSQD50N04-5m6_T4GE3SQD50N04-5m6_GE3SQD50N04-5M6
DescriptionMOSFET 40V 50A 71W AEC-Q101 QualifiedMOSFET N-Channel 40V AEC-Q101 Qualified
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance4.6 mOhms4.6 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge85 nC85 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation71 W71 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height2.38 mm2.38 mm-
Length6.73 mm6.73 mm-
SeriesSQSQ-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min80 S80 S-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time19 ns19 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns13 ns-
Typical Turn On Delay Time9 ns9 ns-
Unit Weight-0.011993 oz-
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