SQJ148EP-T1_GE3 vs SQJ148EP vs SQJ158EP-T1_GE3

 
PartNumberSQJ148EP-T1_GE3SQJ148EPSQJ158EP-T1_GE3
DescriptionMOSFET N Ch 40Vds 20Vgs AEC-Q101 QualifiedMOSFET N-CH 60V 23A POWERPAKSO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8L-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current15 A--
Rds On Drain Source Resistance27 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSQ--
Transistor Type1 N-Channel--
Width5.13 mm--
BrandVishay / Siliconix--
Forward Transconductance Min29 S--
Fall Time2 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.017870 oz--
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