SQJ403BEEP-T1_GE3 vs SQJ403EEP vs SQJ403EEP-SO-8L

 
PartNumberSQJ403BEEP-T1_GE3SQJ403EEPSQJ403EEP-SO-8L
DescriptionMOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
ManufacturerVishayVishay / Siliconix-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8L-4--
Number of Channels1 Channel--
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance7 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge164 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation68 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSQSQ Series-
Transistor Type1 P-Channel--
Width5.13 mm--
BrandVishay / Siliconix--
Forward Transconductance Min32 S--
Fall Time178 ns--
Product TypeMOSFET--
Rise Time82 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time134 ns--
Typical Turn On Delay Time38 ns--
Unit Weight0.017870 oz--
Vds Drain Source Breakdown Voltage-- 30 V-
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