SQJ410EP-T1_GE3 vs SQJ412EP-T1_GE3 vs SQJ411EP

 
PartNumberSQJ410EP-T1_GE3SQJ412EP-T1_GE3SQJ411EP
DescriptionMOSFET N-Channel 30V AEC-Q101 QualifiedMOSFET 40V 32A 83W AEC-Q101 Qualified
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4PowerPAK-SO-8L-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V40 V-
Id Continuous Drain Current32 A32 A-
Rds On Drain Source Resistance3.5 mOhms3.5 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge110 nC120 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation83 W83 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm1.04 mm-
Length6.15 mm6.15 mm-
SeriesSQSQ-
Transistor Type1 N-Channel1 N-Channel-
Width5.13 mm5.13 mm-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time9 ns55 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns150 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns50 ns-
Typical Turn On Delay Time15 ns45 ns-
Unit Weight0.017870 oz0.017870 oz-
RoHS-Y-
Forward Transconductance Min-85 S-
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