SQJ460AEP-T1_GE3 vs SQJ460AEP-T2_GE3 vs SQJ461

 
PartNumberSQJ460AEP-T1_GE3SQJ460AEP-T2_GE3SQJ461
DescriptionMOSFET N Ch 60Vds 20Vgs AEC-Q101 QualifiedMOSFET 60V Vds 20V Vgs PowerPAK SO-8L
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4PowerPAK SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current64 A58 A-
Rds On Drain Source Resistance7.2 mOhms8.7 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge106 nC106 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation83 W68 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min88 S88 S-
Fall Time25 ns25 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns11 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time56 ns56 ns-
Typical Turn On Delay Time12 ns12 ns-
Unit Weight0.017870 oz--
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