PartNumber | SQJ868EP-T1_GE3 | SQJ860EP-T1_GE3 | SQJ868EP |
Description | MOSFET Dual N-Ch 40V AEC-Q101 Qualified | MOSFET 40V Vds 60A Id AEC-Q101 Qualified | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 58 A | 60 A | - |
Rds On Drain Source Resistance | 6.2 mOhms | 5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 55 nC | 55 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 48 W | 48 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Series | SQJ868EP | SQ | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 85 S | 78 S | - |
Fall Time | 8 ns | 5 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9 ns | 5 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 26 ns | 30 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Tradename | - | TrenchFET | - |
Height | - | 1.04 mm | - |
Length | - | 6.15 mm | - |
Width | - | 5.13 mm | - |
Unit Weight | - | 0.017870 oz | - |