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| PartNumber | SQJ912AEP-T1_GE3 | SQJ912 | SQJ912AEP-T1 |
| Description | MOSFET 40V 30A 48W AEC-Q101 Qualified | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 7.7 mOhms, 7.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 38 nC, 38 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 48 W | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SQ | TrenchFETR | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 58 S, 58 S | - | - |
| Fall Time | 11 ns, 11 ns | 11 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns, 9 ns | 9 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns, 23 ns | 23 ns | - |
| Typical Turn On Delay Time | 10 ns, 10 ns | 10 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Package Case | - | PowerPAKR SO-8 Dual | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR SO-8 Dual | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 48W | - |
| Drain to Source Voltage Vdss | - | 40V | - |
| Input Capacitance Ciss Vds | - | 1835pF @ 20V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 30A | - |
| Rds On Max Id Vgs | - | 9.3 mOhm @ 9.7A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 38nC @ 10V | - |
| Pd Power Dissipation | - | 48 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 30 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Rds On Drain Source Resistance | - | 9.3 mOhms | - |
| Qg Gate Charge | - | 25.6 nC | - |