PartNumber | SQJ952EP-T1_GE3 | SQJ951EP-T1_GE3 | SQJ951EP |
Description | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | MOSFET Dual P-Channel 30V AEC-Q101 Qualified | |
Manufacturer | Vishay | Vishay | Vishay Siliconix |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | - |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 30 V | - |
Id Continuous Drain Current | 23 A | 30 A | - |
Rds On Drain Source Resistance | 12 mOhms | 14 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 30 nC, 30 nC | 50 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 25 W | 56 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Tape & Reel (TR) |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SQ | SQ | Automotive, AEC-Q101, TrenchFETR |
Transistor Type | 2 N-Channel | 2 P-Channel | 2 P-Channel |
Width | 5.13 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 68 S, 68 S | 18 S | - |
Fall Time | 9 ns, 9 ns | 28 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 6 ns, 6 ns | 12 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 25 ns, 25 ns | 39 ns | - |
Typical Turn On Delay Time | 9 ns, 9 ns | 12 ns | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |
Package Case | - | - | PowerPAKR SO-8 Dual |
Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PowerPAKR SO-8 Dual |
FET Type | - | - | 2 P-Channel (Dual) |
Power Max | - | - | 56W |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 1680pF @ 10V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 30A |
Rds On Max Id Vgs | - | - | 17 mOhm @ 7.5A, 10V |
Vgs th Max Id | - | - | 2.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 50nC @ 10V |