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| PartNumber | SQJB68EP-T1_GE3 | SQJB60EP-T1_GE3 | SQJB60EP-T2_GE3 |
| Description | MOSFET 100V Vds 20V Vgs PowerPAK SO-8L | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | MOSFET 60V Vds 20V Vgs PowerPAK SO-8L |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK SO-8 | PowerPAK-SO-8L-4 | PowerPAK SO-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
| Id Continuous Drain Current | 11 A | 30 A | 30 A |
| Rds On Drain Source Resistance | 92 mOhms | 10 mOhms | 12 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 8 nC | 30 nC, 30 nC | 30 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 27 W | 48 W | 48 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 8.6 S | 43 S, 43 S | 43 S |
| Fall Time | 5 ns | 25 ns, 25 ns | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 3 ns, 3 ns | 3 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 23 ns, 23 ns | 23 ns |
| Typical Turn On Delay Time | 9 ns | 10 ns, 10 ns | 10 ns |
| Series | - | SQ | SQ |
| Unit Weight | - | 0.017870 oz | - |