PartNumber | SQJQ904E-T1_GE3 | SQJQ906E-T1_GE3 | SQJQ900E-T1_GE3 |
Description | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | MOSFET 40V Vds Dual N-Ch AEC-Q101 Qualified | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-8x8L-4 | PowerPAK-8x8-4 | PowerPAK-8x8L-4 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 100 A | 95 A | 100 A |
Rds On Drain Source Resistance | 2.9 mOhms, 2.9 mOhms | 2.7 mOhms | 3.4 mOhms, 3.4 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 75 nC, 75 nC | 34 nC | 120 nC, 120 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 75 W | 50 W | 135 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | - | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Tube | Reel | Reel |
Height | 1.9 mm | - | - |
Length | 7.9 mm | - | - |
Series | SQ | SQ | SQ |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 6.22 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 80 S, 80 S | - | 105 S, 105 S |
Fall Time | 4 ns, 4 ns | 4 ns | 14 ns, 14 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4.6 ns, 4.6 ns | 4 ns | 7.5 ns, 7.5 ns |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns, 30 ns | 26 ns | 30 ns, 30 ns |
Typical Turn On Delay Time | 15.5 ns, 15.5 ns | 14 ns | 14 ns, 14 ns |