PartNumber | SQM100N02-3M5L_GE3 | SQM100N04-2m7_GE3 | SQM100N04-3M5 |
Description | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | MOSFET 40V 100A 157W AEC-Q101 Qualified | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 40 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 2 mOhms | 2.25 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 110 nC | 145 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 150 W | 157 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Series | SQ | SQ | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 186 S | 201 S | - |
Fall Time | 15 ns | 9 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 5 ns | 11 ns | - |
Factory Pack Quantity | 800 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 38 ns | 48 ns | - |
Typical Turn On Delay Time | 15 ns | 14 ns | - |
Unit Weight | 0.077603 oz | 0.068654 oz | - |
Height | - | 4.83 mm | - |
Length | - | 10.67 mm | - |
Width | - | 9.65 mm | - |