SQM100N02-3M5L_GE3 vs SQM100N04-2m7_GE3 vs SQM100N04-3M5

 
PartNumberSQM100N02-3M5L_GE3SQM100N04-2m7_GE3SQM100N04-3M5
DescriptionMOSFET N Ch 20Vds 20Vgs AEC-Q101 QualifiedMOSFET 40V 100A 157W AEC-Q101 Qualified
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V40 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance2 mOhms2.25 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge110 nC145 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W157 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min186 S201 S-
Fall Time15 ns9 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns11 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time38 ns48 ns-
Typical Turn On Delay Time15 ns14 ns-
Unit Weight0.077603 oz0.068654 oz-
Height-4.83 mm-
Length-10.67 mm-
Width-9.65 mm-
Top