SQM120P04-04L_GE3 vs SQM120P04-04L vs SQM120P06

 
PartNumberSQM120P04-04L_GE3SQM120P04-04LSQM120P06
DescriptionMOSFET P-Channel 40V AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance3.4 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge330 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min97 S--
Fall Time45 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time112 ns--
Typical Turn On Delay Time17 ns--
Unit Weight0.077603 oz--
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