PartNumber | SQM120P04-04L_GE3 | SQM120P04-04L | SQM120P06 |
Description | MOSFET P-Channel 40V AEC-Q101 Qualified | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 120 A | - | - |
Rds On Drain Source Resistance | 3.4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 330 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 375 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Series | SQ | - | - |
Transistor Type | 1 P-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 97 S | - | - |
Fall Time | 45 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 15 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 112 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |
Unit Weight | 0.077603 oz | - | - |