SQM120P06-07L_GE3 vs SQM120P06-07L_GE3-CUT TAPE vs SQM120P06-07L

 
PartNumberSQM120P06-07L_GE3SQM120P06-07L_GE3-CUT TAPESQM120P06-07L
DescriptionMOSFET 60 V 120A 375 W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance6.7 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge180 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesSQ--
Transistor Type1 P-Channel--
Width9.65 mm--
BrandVishay / Siliconix--
Forward Transconductance Min90 S--
Fall Time32 ns--
Product TypeMOSFET--
Rise Time23 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time97 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.068654 oz--
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