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| PartNumber | SQM200N04-1m1L_GE3 | SQM200N04-1M1L | SQM200N04-1M7L |
| Description | MOSFET 40V 200A, 375W AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 200 A | - | - |
| Rds On Drain Source Resistance | 800 uOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 413 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 4.82 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 219 S | - | - |
| Fall Time | 126 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 443 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Unit Weight | 0.056438 oz | - | - |