SQM40016EM_GE3 vs SQM40010EL_GE3 vs SQM40014EM_GE3

 
PartNumberSQM40016EM_GE3SQM40010EL_GE3SQM40014EM_GE3
DescriptionMOSFET 40V Vds 20V Vgs D2PAK (TO-263-7L)MOSFET N Ch 40Vds 20Vgs AEC-Q101 QualifiedMOSFET N-CH 40V 200A TO263-7
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current250 A120 A-
Rds On Drain Source Resistance1 mOhms1.21 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V1.5 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge163 nC230 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelTube-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min181 S174 S-
Fall Time35 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time215 ns20 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time59 ns60 ns-
Typical Turn On Delay Time24 ns14 ns-
Qualification-AEC-Q101-
Series-SQ-
Unit Weight-0.077603 oz-
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