SQM40022EM_GE3 vs SQM40022E_GE3 vs SQM40022E

 
PartNumberSQM40022EM_GE3SQM40022E_GE3SQM40022E
DescriptionMOSFET 40V Vds 20V Vgs D2PAK (TO-263-7L)MOSFET 40V Vds 20V Vgs D2PAK (TO-263)
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current150 A150 A-
Rds On Drain Source Resistance163 Ohms163 Ohms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge106 nC106 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W150 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min143 S143 S-
Fall Time26 ns26 ns-
Product TypeMOSFETMOSFET-
Rise Time194 ns194 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time45 ns45 ns-
Typical Turn On Delay Time19 ns19 ns-
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