SQM70060EL_GE3 vs SQM700JB-0R1 vs SQM70060EL

 
PartNumberSQM70060EL_GE3SQM700JB-0R1SQM70060EL
DescriptionMOSFET N Ch 100Vds 20Vgs AEC-Q101 QualifiedWirewound Resistors - Through Hole
ManufacturerVishayYageo-
Product CategoryMOSFETWirewound Resistors - Through Hole-
RoHSY--
TechnologySiWirewound-
Mounting StyleSMD/SMTPCB Mount-
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance4.6 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge100 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation166 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesSQSQM-
Transistor Type1 N-Channel--
Width9.65 mm--
BrandVishay / SiliconixYageo-
Forward Transconductance Min95 S--
Fall Time13 ns--
Product TypeMOSFETWirewound Resistors-
Rise Time21 ns--
Factory Pack Quantity800--
SubcategoryMOSFETsResistors-
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.077603 oz--
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